10kV SiC MOSFET split output power module

Szymon Beczkowski; Helong Li; Christian Uhrenfeldt; Emanuel-Petre Eni; Stig Munk-Nielsen

doi:10.1109/EPE.2015.7309450

10kV SiC MOSFET split output power module

Szymon Beczkowski, Helong Li, Christian Uhrenfeldt, Emanuel-Petre Eni, Stig Munk-Nielsen

AAU Energi

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

10 Citationer (Scopus)

Abstract

The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

Originalsprog	Engelsk
Titel	Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Antal sider	7
Forlag	IEEE Press
Publikationsdato	sep. 2015
Sider	1-7
DOI	https://doi.org/10.1109/EPE.2015.7309450
Status	Udgivet - sep. 2015
Begivenhed	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Schweiz Varighed: 8 sep. 2015 → 10 sep. 2015

Konference

Konference	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Lokation	Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
Land/Område	Schweiz
By	Geneva
Periode	08/09/2015 → 10/09/2015

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10.1109/EPE.2015.7309450

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Citationsformater

@inproceedings{9b7e5cbe7ebb46fab451c81028cca3cd,

title = "10kV SiC MOSFET split output power module",

abstract = "The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.",

keywords = "power MOSFET, Silicon compounds, Wide band gap semiconductors, MOSFET split output power module, Parasitic turn-on phenomenon, Peak current, Poor body diode performance, Voltage 10 kV",

author = "Szymon Beczkowski and Helong Li and Christian Uhrenfeldt and Emanuel-Petre Eni and Stig Munk-Nielsen",

year = "2015",

month = sep,

doi = "10.1109/EPE.2015.7309450",

language = "English",

pages = "1--7 ",

booktitle = "Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)",

publisher = "IEEE Press",

note = "17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, IEEE ECCE-EPE 2015 ; Conference date: 08-09-2015 Through 10-09-2015",

}

Beczkowski, S, Li, H, Uhrenfeldt, C, Eni, E-P & Munk-Nielsen, S 2015, 10kV SiC MOSFET split output power module. i Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, s. 1-7 , 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Schweiz, 08/09/2015. https://doi.org/10.1109/EPE.2015.7309450

10kV SiC MOSFET split output power module. / Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian et al.
Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 2015. s. 1-7 .

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - 10kV SiC MOSFET split output power module

AU - Beczkowski, Szymon

AU - Li, Helong

AU - Uhrenfeldt, Christian

AU - Eni, Emanuel-Petre

AU - Munk-Nielsen, Stig

PY - 2015/9

Y1 - 2015/9

N2 - The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

AB - The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

KW - power MOSFET

KW - Silicon compounds

KW - Wide band gap semiconductors

KW - MOSFET split output power module

KW - Parasitic turn-on phenomenon

KW - Peak current

KW - Poor body diode performance

KW - Voltage 10 kV

U2 - 10.1109/EPE.2015.7309450

DO - 10.1109/EPE.2015.7309450

M3 - Article in proceeding

SP - 1

EP - 7

BT - Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

PB - IEEE Press

T2 - 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Y2 - 8 September 2015 through 10 September 2015

ER -

10kV SiC MOSFET split output power module

Abstract

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