A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

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Abstract

The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.
OriginalsprogEngelsk
TitelProceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider8
ForlagIEEE Press
Publikationsdatomar. 2017
Sider966-973
ISBN (Trykt)978-1-5090-5366-7
DOI
StatusUdgivet - mar. 2017
Begivenhed2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa Convention Center, Tampa, FL, USA
Varighed: 26 mar. 201730 mar. 2017

Konference

Konference2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationTampa Convention Center
Land/OmrådeUSA
ByTampa, FL
Periode26/03/201730/03/2017
NavnIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN2470-6647

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