A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

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Abstract

This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical analysis and current balancing performance of the proposed DBC layout.
OriginalsprogEngelsk
TitelProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider5
ForlagIEEE
Publikationsdatomar. 2016
Sider704-708
ISBN (Trykt)978-1-4673-8393-6, 978-1-4673-9551-9
ISBN (Elektronisk)978-1-4673-9550-2
DOI
StatusUdgivet - mar. 2016
Begivenhed2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, USA
Varighed: 20 mar. 201624 mar. 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Konference

Konference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationLong Beach Convention and Entertainment Center
Land/OmrådeUSA
ByLong Beach
Periode20/03/201624/03/2016
Internetadresse

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