A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Mengxing Chen; Huai Wang; Frede Blaabjerg; Xiongfei Wang; Donghua Pan

doi:10.1109/SPEC.2018.8636024

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Mengxing Chen, Huai Wang, Frede Blaabjerg, Xiongfei Wang, Donghua Pan

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

9 Citationer (Scopus)

1 Downloads (Pure)

Abstract

The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

Originalsprog	Engelsk
Titel	Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)
Antal sider	7
Forlag	IEEE Press
Publikationsdato	dec. 2018
Sider	1-7
ISBN (Trykt)	978-1-5386-8258-6
ISBN (Elektronisk)	978-1-5386-8257-9
DOI	https://doi.org/10.1109/SPEC.2018.8636024
Status	Udgivet - dec. 2018
Begivenhed	The 4th IEEE Southern Power Electronics Conference, SPEC 2018 - Nanyang Technological University, Singapore Varighed: 10 dec. 2018 → 13 dec. 2018

Konference

Konference	The 4th IEEE Southern Power Electronics Conference, SPEC 2018
Lokation	Nanyang Technological University
Land/Område	Singapore
Periode	10/12/2018 → 13/12/2018

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10.1109/SPEC.2018.8636024

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https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8636024

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)
Blaabjerg, F., Wang, H., Wang, X., Chen, M. & Qin, Z.
01/12/2016 → 31/12/2020
Projekter: Projekt › Forskning
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

SPEC 2018 Best Papers Award
Chen, Mengxing (Modtager), Wang, Huai (Modtager), Blaabjerg, Frede (Modtager), Wang, Xiongfei (Modtager) & Pan, Donghua (Modtager), 13 dec. 2018
Pris: Konferencepriser

Citationsformater

@inproceedings{3173ed918c9c429b9be0d1a49e9c69c6,

title = "A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment",

abstract = "The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.",

keywords = "silicon carbide power device, temperature-dependent thermal model, thermal coupling effect, finite element method, RC lumped thermal model",

author = "Mengxing Chen and Huai Wang and Frede Blaabjerg and Xiongfei Wang and Donghua Pan",

year = "2018",

month = dec,

doi = "10.1109/SPEC.2018.8636024",

language = "English",

isbn = "978-1-5386-8258-6",

pages = "1--7",

booktitle = "Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)",

publisher = "IEEE Press",

note = "The 4th IEEE Southern Power Electronics Conference, SPEC 2018, SPEC 2018 ; Conference date: 10-12-2018 Through 13-12-2018",

}

Chen, M, Wang, H , Blaabjerg, F , Wang, X & Pan, D 2018, A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment. i Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018). IEEE Press, s. 1-7, The 4th IEEE Southern Power Electronics Conference, SPEC 2018, Singapore, 10/12/2018. https://doi.org/10.1109/SPEC.2018.8636024

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment. / Chen, Mengxing; Wang, Huai ; Blaabjerg, Frede et al.
Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018). IEEE Press, 2018. s. 1-7.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

AU - Chen, Mengxing

AU - Wang, Huai

AU - Blaabjerg, Frede

AU - Wang, Xiongfei

AU - Pan, Donghua

PY - 2018/12

Y1 - 2018/12

N2 - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

AB - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

KW - silicon carbide power device

KW - temperature-dependent thermal model

KW - thermal coupling effect

KW - finite element method

KW - RC lumped thermal model

UR - https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8636024

U2 - 10.1109/SPEC.2018.8636024

DO - 10.1109/SPEC.2018.8636024

M3 - Article in proceeding

SN - 978-1-5386-8258-6

SP - 1

EP - 7

BT - Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)

PB - IEEE Press

T2 - The 4th IEEE Southern Power Electronics Conference, SPEC 2018

Y2 - 10 December 2018 through 13 December 2018

ER -

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Abstract

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Fingeraftryk

Projekter

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)

Center Of Reliable Power Electronics (CORPE)

Priser

SPEC 2018 Best Papers Award

Citationsformater