Abstract
This paper introduces an advanced gate driver used as thermal swing control method for the reduction of AC load current-related ΔTj in Insulated-Gate Bipolar Transistors (IGBTs). A switchable gate resistor network is applied to the advanced gate driver, so that the switching power losses can be changed according to the amplitude of AC current. Accordingly, a closed-loop thermal control method including the functions of root-mean-square calculation and phase analysis is proposed. Hence ΔTj can be reduced by means of changing losses-related gate resistors on the basis of output fundamental frequency and amplitude of AC load current. As a result, longer device useful life duration can be achieved. Furthermore, the maximum junction temperature under high-temperature operation can be reduced by means of the proposed method. Simulations and experiments are provided to validate the effectiveness of the proposed active gate driver.
Originalsprog | Engelsk |
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Titel | Proceedings of 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2016 IEEE |
Antal sider | 7 |
Forlag | IEEE Press |
Publikationsdato | jun. 2016 |
ISBN (Elektronisk) | 978-1-4673-8617-3 |
DOI | |
Status | Udgivet - jun. 2016 |
Begivenhed | 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2016 IEEE - Varighed: 27 jun. 2016 → 30 jun. 2016 |
Konference
Konference | 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2016 IEEE |
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Periode | 27/06/2016 → 30/06/2016 |