Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

Haoze Luo; Francesco Iannuzzo; Frede Blaabjerg; Marcello Turnaturi; Emilio Mattiuzzo

doi:10.1109/ECCE.2017.8096478

Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg, Marcello Turnaturi, Emilio Mattiuzzo

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

42 Citationer (Scopus)

Abstract

A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of ΔTj=60 °C, mean temperature Tjm=145 °C and the maximum Tj=175 °C. By means of device analyzer, the degraded conditions of electrical parameters after power cycling test are fully investigated and compared. As a result, the effects of degradation on the static and dynamic characteristics during conventional operation are discussed. Finally, the research results can help examine the failure precursors and then estimate the remaining useful lifetime of SiC MOSFET modules.

Originalsprog	Engelsk
Titel	Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Forlag	IEEE Press
Publikationsdato	okt. 2017
ISBN (Elektronisk)	978-1-5090-2998-3
DOI	https://doi.org/10.1109/ECCE.2017.8096478
Status	Udgivet - okt. 2017
Begivenhed	2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, USA Varighed: 1 okt. 2017 → 5 okt. 2017

Konference

Konference	2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Land/Område	USA
By	Cincinnati, Ohio
Periode	01/10/2017 → 05/10/2017

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10.1109/ECCE.2017.8096478

http://ieeexplore.ieee.org/document/8096478/

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Citationsformater

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title = "Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions",

abstract = "A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of ΔTj=60 °C, mean temperature Tjm=145 °C and the maximum Tj=175 °C. By means of device analyzer, the degraded conditions of electrical parameters after power cycling test are fully investigated and compared. As a result, the effects of degradation on the static and dynamic characteristics during conventional operation are discussed. Finally, the research results can help examine the failure precursors and then estimate the remaining useful lifetime of SiC MOSFET modules.",

keywords = "Silicon carbide, Power MOSFET, Power cycling test, Device analysis, Aging precursor",

author = "Haoze Luo and Francesco Iannuzzo and Frede Blaabjerg and Marcello Turnaturi and Emilio Mattiuzzo",

year = "2017",

month = oct,

doi = "10.1109/ECCE.2017.8096478",

language = "English",

booktitle = "Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE Press",

note = "2017 IEEE Energy Conversion Congress and Exposition (ECCE) ; Conference date: 01-10-2017 Through 05-10-2017",

}

Luo, H, Iannuzzo, F , Blaabjerg, F, Turnaturi, M & Mattiuzzo, E 2017, Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions. i Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, Ohio, USA, 01/10/2017. https://doi.org/10.1109/ECCE.2017.8096478

Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions. / Luo, Haoze; Iannuzzo, Francesco ; Blaabjerg, Frede et al.
Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

AU - Luo, Haoze

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

AU - Turnaturi, Marcello

AU - Mattiuzzo, Emilio

PY - 2017/10

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N2 - A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of ΔTj=60 °C, mean temperature Tjm=145 °C and the maximum Tj=175 °C. By means of device analyzer, the degraded conditions of electrical parameters after power cycling test are fully investigated and compared. As a result, the effects of degradation on the static and dynamic characteristics during conventional operation are discussed. Finally, the research results can help examine the failure precursors and then estimate the remaining useful lifetime of SiC MOSFET modules.

AB - A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of ΔTj=60 °C, mean temperature Tjm=145 °C and the maximum Tj=175 °C. By means of device analyzer, the degraded conditions of electrical parameters after power cycling test are fully investigated and compared. As a result, the effects of degradation on the static and dynamic characteristics during conventional operation are discussed. Finally, the research results can help examine the failure precursors and then estimate the remaining useful lifetime of SiC MOSFET modules.

KW - Silicon carbide

KW - Power MOSFET

KW - Power cycling test

KW - Device analysis

KW - Aging precursor

U2 - 10.1109/ECCE.2017.8096478

DO - 10.1109/ECCE.2017.8096478

M3 - Article in proceeding

BT - Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

T2 - 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

Y2 - 1 October 2017 through 5 October 2017

ER -

Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

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