@inproceedings{0e2940b595c54f43b42cb48e9f41905f,
title = "Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer",
abstract = "This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated regarding three essential qualities: high bandwidth, suitable physical size, and galvanic isolation. Then, the proposed current measurement method with SSCT is mathematically analyzed, which proves that the proposed method has the capability of measuring fast switching current. Simultaneously, it compensates the mechanical size limitations of the Pearson current monitor. Finally, experimental studied are carried out with both discrete Silicon Carbide (SiC) MOSFET and high current (1000A) Silicon (Si) IGBT power modules. The experimental results validate the effectiveness of the proposed method.",
keywords = "Current transformers, Electric current measurement, Elemental semiconductors, Insulated gate bipolar transistors, Power MOSFET, Power bipolar transistors, Silicon, Silicon compounds, Wide band gap semiconductors",
author = "Helong Li and Szymon Beczkowski and Stig Munk-Nielsen and Kaiyuan Lu and Qian Wu",
year = "2015",
month = mar,
doi = "10.1109/APEC.2015.7104706",
language = "English",
isbn = "978-1-4799-6735-3",
series = "I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings",
publisher = "IEEE Press",
pages = "2527 -- 2531 ",
booktitle = "Proceedings of the 2015 IEEE Applied Power Electronics Conference and Exposition (APEC)",
note = "30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015, IEEE APEC 2015 ; Conference date: 15-03-2015 Through 19-03-2015",
}