Detail study of SiC MOSFET switching characteristics

Helong Li; Stig Munk-Nielsen

doi:10.1109/PEDG.2014.6878691

Detail study of SiC MOSFET switching characteristics

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

51 Citationer (Scopus)

Abstract

This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs.

Originalsprog	Engelsk
Titel	Proceedings of the 5th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014
Antal sider	5
Forlag	IEEE Press
Publikationsdato	2014
Sider	1-5
DOI	https://doi.org/10.1109/PEDG.2014.6878691
Status	Udgivet - 2014
Begivenhed	5th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014 - Galway, Irland Varighed: 24 jun. 2014 → 27 jun. 2014 Konferencens nummer: 5 http://www.pedg2014.org/

Konference

Konference	5th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014
Nummer	5
Land/Område	Irland
By	Galway
Periode	24/06/2014 → 27/06/2014
Internetadresse	http://www.pedg2014.org/

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10.1109/PEDG.2014.6878691

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Citationsformater

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title = "Detail study of SiC MOSFET switching characteristics",

abstract = "This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs.",

keywords = "Power Devices, SiC MOSFET, Switching Characteristic",

author = "Helong Li and Stig Munk-Nielsen",

year = "2014",

doi = "10.1109/PEDG.2014.6878691",

language = "English",

pages = "1--5",

booktitle = "Proceedings of the 5th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014",

publisher = "IEEE Press",

note = "5th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014 ; Conference date: 24-06-2014 Through 27-06-2014",

url = "http://www.pedg2014.org/",

}

Li, H & Munk-Nielsen, S 2014, Detail study of SiC MOSFET switching characteristics. i Proceedings of the 5th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014 . IEEE Press, s. 1-5, 5th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014, Galway, Irland, 24/06/2014. https://doi.org/10.1109/PEDG.2014.6878691

TY - GEN

T1 - Detail study of SiC MOSFET switching characteristics

AU - Li, Helong

AU - Munk-Nielsen, Stig

N1 - Conference code: 5

PY - 2014

Y1 - 2014

N2 - This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs.

AB - This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs.

KW - Power Devices

KW - SiC MOSFET

KW - Switching Characteristic

U2 - 10.1109/PEDG.2014.6878691

DO - 10.1109/PEDG.2014.6878691

M3 - Article in proceeding

SP - 1

EP - 5

BT - Proceedings of the 5th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014

PB - IEEE Press

T2 - 5th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2014

Y2 - 24 June 2014 through 27 June 2014

ER -

Detail study of SiC MOSFET switching characteristics

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