Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET

A. Porzio; G. Busatto; F. Velardi; F. Iannuzzo; A. Sanseverino; G. Currò

doi:10.1109/RADECS.2005.4365576

Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET

A. Porzio^*, G. Busatto, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò

^*Kontaktforfatter

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

10 Citationer (Scopus)

Abstract

We present a 3-D simulation study, supported by experimental results, which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it Whereas during SEBphenomena the generatedcharge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction.

Originalsprog	Engelsk
Titel	RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems
Publikationsdato	1 dec. 2005
Artikelnummer	4365576
ISBN (Trykt)	0780395018, 9780780395015
DOI	https://doi.org/10.1109/RADECS.2005.4365576
Status	Udgivet - 1 dec. 2005
Udgivet eksternt	Ja
Begivenhed	8th European Conference on Radiation and its Effects on Components and Systems, RADECS 2005 - Cap D' Agde, Frankrig Varighed: 19 sep. 2005 → 23 sep. 2005

Konference

Konference	8th European Conference on Radiation and its Effects on Components and Systems, RADECS 2005
Land/Område	Frankrig
By	Cap D' Agde
Periode	19/09/2005 → 23/09/2005

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10.1109/RADECS.2005.4365576

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Citationsformater

Porzio, A., Busatto, G., Velardi, F., Iannuzzo, F., Sanseverino, A., & Currò, G. (2005). Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET. I RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems Artikel 4365576 https://doi.org/10.1109/RADECS.2005.4365576

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title = "Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET",

abstract = "We present a 3-D simulation study, supported by experimental results, which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it Whereas during SEBphenomena the generatedcharge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction.",

author = "A. Porzio and G. Busatto and F. Velardi and F. Iannuzzo and A. Sanseverino and G. Curr{\`o}",

year = "2005",

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doi = "10.1109/RADECS.2005.4365576",

language = "English",

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booktitle = "RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems",

note = "8th European Conference on Radiation and its Effects on Components and Systems, RADECS 2005 ; Conference date: 19-09-2005 Through 23-09-2005",

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Porzio, A, Busatto, G, Velardi, F, Iannuzzo, F, Sanseverino, A & Currò, G 2005, Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET. i RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems., 4365576, 8th European Conference on Radiation and its Effects on Components and Systems, RADECS 2005, Cap D' Agde, Frankrig, 19/09/2005. https://doi.org/10.1109/RADECS.2005.4365576

Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET. / Porzio, A.; Busatto, G.; Velardi, F. et al.
RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems. 2005. 4365576.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET

AU - Porzio, A.

AU - Busatto, G.

AU - Velardi, F.

AU - Iannuzzo, F.

AU - Sanseverino, A.

AU - Currò, G.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We present a 3-D simulation study, supported by experimental results, which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it Whereas during SEBphenomena the generatedcharge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction.

AB - We present a 3-D simulation study, supported by experimental results, which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it Whereas during SEBphenomena the generatedcharge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction.

UR - http://www.scopus.com/inward/record.url?scp=48349128495&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2005.4365576

DO - 10.1109/RADECS.2005.4365576

M3 - Article in proceeding

AN - SCOPUS:48349128495

SN - 0780395018

SN - 9780780395015

BT - RADECS 2005 - Proceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems

T2 - 8th European Conference on Radiation and its Effects on Components and Systems, RADECS 2005

Y2 - 19 September 2005 through 23 September 2005

ER -

Experimental and 3D simulation study on the role of the parasitic BJT activation in SEB/SEGR of power MOSFET

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