Abstract
An experimental characterization of new 3300V - 1200A IGBT modules both at high temperature and for output currents beyond SOA, at turn-off and in short circuit conditions, is presented. Moreover a new driving strategy that improves, in comparison with conventional driving methods, IGBT turn-on on inductive load, in terms of power dissipation, is reported. Results demonstrate that, in principle, it is possible to operate at larger current than RBSOA limits and at temperature of 145°C. As regard turn-on operation, up to 37% dissipated energy reduction can be obtained with the innovative on-gate control. All the experimental study has been performed by means of a non-destructive experimental set-up, where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour.
Originalsprog | Engelsk |
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Titel | 2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 |
Antal sider | 5 |
Vol/bind | 4 |
Publikationsdato | 29 nov. 2004 |
Sider | 2588-2592 |
ISBN (Trykt) | 0780383990 |
DOI | |
Status | Udgivet - 29 nov. 2004 |
Udgivet eksternt | Ja |
Begivenhed | 2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 - Aachen, Tyskland Varighed: 20 jun. 2004 → 25 jun. 2004 |
Konference
Konference | 2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 |
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Land/Område | Tyskland |
By | Aachen |
Periode | 20/06/2004 → 25/06/2004 |
Sponsor | IEEE Power Electronics Society, IEEE Joint IAS/PELS/IES German Chapter |