Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate; G. Busatto; F. Iannuzzo; S. Mattiazzo; A. Sanseverino; L. Silvestrin; D. Tedesco; F. Velardi

doi:10.1016/j.microrel.2015.06.139

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto^*, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, F. Velardi

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Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

30 Citationer (Scopus)

Abstract

An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

Originalsprog	Engelsk
Tidsskrift	Microelectronics Reliability
Vol/bind	55
Udgave nummer	9-10
Sider (fra-til)	1496-1500
Antal sider	5
ISSN	0026-2714
DOI	https://doi.org/10.1016/j.microrel.2015.06.139
Status	Udgivet - 1 aug. 2015
Udgivet eksternt	Ja

Emneord

Enhancement mode GaN power HEMT
Heavy ion irradiation
SEB
SEE
SEGR

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10.1016/j.microrel.2015.06.139

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Citationsformater

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abstract = "An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.",

keywords = "Enhancement mode GaN power HEMT, Heavy ion irradiation, SEB, SEE, SEGR",

author = "C. Abbate and G. Busatto and F. Iannuzzo and S. Mattiazzo and A. Sanseverino and L. Silvestrin and D. Tedesco and F. Velardi",

year = "2015",

month = aug,

day = "1",

doi = "10.1016/j.microrel.2015.06.139",

language = "English",

volume = "55",

pages = "1496--1500",

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TY - JOUR

T1 - Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

AU - Abbate, C.

AU - Busatto, G.

AU - Iannuzzo, F.

AU - Mattiazzo, S.

AU - Sanseverino, A.

AU - Silvestrin, L.

AU - Tedesco, D.

AU - Velardi, F.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

AB - An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

KW - Enhancement mode GaN power HEMT

KW - Heavy ion irradiation

KW - SEB

KW - SEE

KW - SEGR

UR - http://www.scopus.com/inward/record.url?scp=84943455111&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.06.139

DO - 10.1016/j.microrel.2015.06.139

M3 - Journal article

AN - SCOPUS:84943455111

SN - 0026-2714

VL - 55

SP - 1496

EP - 1500

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-10

ER -

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Abstract

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