Projekter pr. år
Abstract
This paper presents the experimental results obtained from investigating the impact of short-circuit in SiC MOSFETs at high temperatures. The results indicate that a gate degradation mechanism occurs under a single-stress short circuit event at nominal voltage and junction temperature of 150° C. The failure mechanism is the gate breakdown, which can be early detected by monitoring the voltage drop of the gate-voltage waveform. The reduction of the gate voltage indicates that a leakage current flows through the gate, leading to a permanent damage of the device but preserving its voltage blocking capability. This hypothesis has been validated through semiconductor failure analysis by comparing the structure of a fresh and a degraded SiC MOSFET. A Focused Ion Beam cut is performed showing cracks between the poly-silicon gate and aluminium source. Furthermore alterations/particles near the source contact have been found for the degraded device.
Originalsprog | Engelsk |
---|---|
Titel | Proceedings of the IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits |
Antal sider | 5 |
Vol/bind | 2018-July |
Forlag | IEEE Press |
Publikationsdato | jul. 2018 |
Sider | 1-5 |
Artikelnummer | 8452575 |
ISBN (Trykt) | 978-1-5386-4930-5 |
ISBN (Elektronisk) | 978-1-5386-4929-9 |
DOI | |
Status | Udgivet - jul. 2018 |
Begivenhed | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Varighed: 16 jul. 2018 → 19 jul. 2018 |
Konference
Konference | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 |
---|---|
Land/Område | Singapore |
By | Singapore |
Periode | 16/07/2018 → 19/07/2018 |
Sponsor | Hamamatsu Photonics K.K., Thermo Fisher Scientific, Inc. |
Navn | IEEE International Symposium on Physical & Failure Analysis of Integrated Circuit (IPFA) |
---|---|
ISSN | 1946-1550 |
Fingeraftryk
Dyk ned i forskningsemnerne om 'Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature'. Sammen danner de et unikt fingeraftryk.Projekter
- 1 Afsluttet
-
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning