Abstract
The advent of the silicon carbide (SiC) power device with high voltage stress would simplify the power applications since two-level topologies would be possible to instead three-level (TL) based topologies. This paper proposes a full-bridge (FB) T-type isolated DC/DC converter composed of four main power switches with high voltage stress (SiC MOSFET) and four auxiliary power switches with low voltage stress (Si MOSFET). Therefore, comparing with the conventional diode-clamped FB TL isolated DC/DC converter, the proposed converter has fewer circuit components and simpler circuit structure. What is more, a corresponding control strategy is proposed, which can not only realize zero-voltage switching (ZVS) but also achieve wide input voltage range. Finally, simulation and experimental results are both presented for verification.
| Originalsprog | Engelsk |
|---|---|
| Titel | Proceedings of IPEC 2018 ECCE Asia |
| Antal sider | 6 |
| Forlag | IEEE |
| Publikationsdato | maj 2018 |
| Sider | 2708-2713 |
| ISBN (Trykt) | 978-1-5386-4190-3 |
| ISBN (Elektronisk) | 978-4-88686-405-5 |
| DOI | |
| Status | Udgivet - maj 2018 |
| Begivenhed | The 2018 International Power Electronics Conference - Niigata, Japan Varighed: 20 maj 2018 → 24 maj 2018 |
Konference
| Konference | The 2018 International Power Electronics Conference |
|---|---|
| Land/Område | Japan |
| By | Niigata |
| Periode | 20/05/2018 → 24/05/2018 |