Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Publikation: Forskning - peer reviewTidsskriftartikel

Abstrakt

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping
eliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.
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Detaljer

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping
eliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.
OriginalsprogEngelsk
TidsskriftPhysica Status Solidi. A: Applications and Materials Science
Vol/bindin press
Antal sider7
ISSN0031-8965
DOI
StatusUdgivet - jul. 2017
ID: 260961823