Mission-profile-based stress analysis of bond-wires in SiC power modules

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Abstract

This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 minutes long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind64
Sider (fra-til)419–424
Antal sider6
ISSN0026-2714
DOI
StatusUdgivet - sep. 2016

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