Projekter pr. år
Abstract
This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 minutes long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation.
Originalsprog | Engelsk |
---|---|
Tidsskrift | Microelectronics Reliability |
Vol/bind | 64 |
Sider (fra-til) | 419–424 |
Antal sider | 6 |
ISSN | 0026-2714 |
DOI | |
Status | Udgivet - sep. 2016 |
Fingeraftryk
Dyk ned i forskningsemnerne om 'Mission-profile-based stress analysis of bond-wires in SiC power modules'. Sammen danner de et unikt fingeraftryk.Projekter
- 1 Afsluttet
-
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning