Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari; Amir Sajjad Bahman; Paula Diaz Reigosa; Lorenzo Ceccarelli; Francesco Iannuzzo; Mohammad Tavakoli Bina

doi:10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Lorenzo Ceccarelli, Francesco Iannuzzo, Mohammad Tavakoli Bina

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

8 Citationer (Scopus)

301 Downloads (Pure)

Abstract

Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

Originalsprog	Engelsk
Titel	Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Antal sider	6
Forlag	IEEE Press
Publikationsdato	sep. 2018
Sider	1-6
ISBN (Trykt)	978-1-5386-6760-6
ISBN (Elektronisk)	978-1-5386-6759-0
DOI	https://doi.org/10.1109/THERMINIC.2018.8593307
Status	Udgivet - sep. 2018
Begivenhed	24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Stockholm, Sverige Varighed: 26 sep. 2018 → 28 sep. 2018

Konference

Konference	24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Land/Område	Sverige
By	Stockholm
Periode	26/09/2018 → 28/09/2018

Navn	International Workshop on Thermal Investigations of ICs and Systems
ISSN	2474-1515

Adgang til dokumentet

10.1109/THERMINIC.2018.8593307

AcceptedAccepteret manuskript, 1,27 MB

AUB Link

Søg efter materialet i Aalborg Universitetsbiblioteks søgemaskine

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

Citationsformater

Akbari, M., Bahman, A. S., Reigosa, P. D., Ceccarelli, L., Iannuzzo, F., & Tavakoli Bina, M. (2018). Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. I Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) (s. 1-6). IEEE Press. https://doi.org/10.1109/THERMINIC.2018.8593307

Akbari, Mohsen ; Bahman, Amir Sajjad ; Reigosa, Paula Diaz et al. / Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, 2018. s. 1-6 (International Workshop on Thermal Investigations of ICs and Systems).

@inproceedings{2d6546b2e55747c8b4e08ac3e0a97aec,

title = "Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs",

abstract = "Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.",

author = "Mohsen Akbari and Bahman, {Amir Sajjad} and Reigosa, {Paula Diaz} and Lorenzo Ceccarelli and Francesco Iannuzzo and {Tavakoli Bina}, Mohammad",

year = "2018",

month = sep,

doi = "10.1109/THERMINIC.2018.8593307",

language = "English",

isbn = "978-1-5386-6760-6",

series = "International Workshop on Thermal Investigations of ICs and Systems",

pages = "1--6",

booktitle = "Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",

publisher = "IEEE Press",

note = "24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), THERMINIC ; Conference date: 26-09-2018 Through 28-09-2018",

}

Akbari, M, Bahman, AS, Reigosa, PD, Ceccarelli, L, Iannuzzo, F & Tavakoli Bina, M 2018, Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. i Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, International Workshop on Thermal Investigations of ICs and Systems, s. 1-6, 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Stockholm, Sverige, 26/09/2018. https://doi.org/10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. / Akbari, Mohsen; Bahman, Amir Sajjad; Reigosa, Paula Diaz et al.
Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, 2018. s. 1-6 (International Workshop on Thermal Investigations of ICs and Systems).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

AU - Akbari, Mohsen

AU - Bahman, Amir Sajjad

AU - Reigosa, Paula Diaz

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Tavakoli Bina, Mohammad

PY - 2018/9

Y1 - 2018/9

N2 - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

AB - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

U2 - 10.1109/THERMINIC.2018.8593307

DO - 10.1109/THERMINIC.2018.8593307

M3 - Article in proceeding

SN - 978-1-5386-6760-6

T3 - International Workshop on Thermal Investigations of ICs and Systems

SP - 1

EP - 6

BT - Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

PB - IEEE Press

T2 - 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

Y2 - 26 September 2018 through 28 September 2018

ER -

Akbari M, Bahman AS, Reigosa PD, Ceccarelli L, Iannuzzo F, Tavakoli Bina M. Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. I Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press. 2018. s. 1-6. (International Workshop on Thermal Investigations of ICs and Systems). doi: 10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Abstract

Konference

Adgang til dokumentet

AUB Link

Fingeraftryk

Projekter

Center Of Reliable Power Electronics (CORPE)

Citationsformater