TY - JOUR
T1 - Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress
AU - Choi, Uimin
AU - Blaabjerg, Frede
AU - Jørgensen, Søren
PY - 2018/3
Y1 - 2018/3
N2 - Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector-emitter voltage (VCE ON) and forward voltage (VF) measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.
AB - Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector-emitter voltage (VCE ON) and forward voltage (VF) measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.
KW - Failure mechanism
KW - Insulated gate bipolar transistor (IGBT)
KW - Power cycling (PC) test
KW - Power device module
KW - Reliability
KW - Wear-out failure
UR - http://www.scopus.com/inward/record.url?scp=85038943924&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2017.2690500
DO - 10.1109/TPEL.2017.2690500
M3 - Journal article
SN - 0885-8993
VL - 33
SP - 2531
EP - 2551
JO - I E E E Transactions on Power Electronics
JF - I E E E Transactions on Power Electronics
IS - 3
M1 - 7922584
ER -