Abstract
This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent circuit model is also built, to better simulate the experimental behavior of the device, adding circuit strain components and other non-idealities to the overall model. A good match between measurements and simulations is observed, mostly validating either the theoretical assumptions and the presented model.
Originalsprog | Engelsk |
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Titel | Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
Forlag | IEEE Press |
Publikationsdato | okt. 2017 |
ISBN (Elektronisk) | 978-1-5090-2998-3 |
DOI | |
Status | Udgivet - okt. 2017 |
Begivenhed | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, USA Varighed: 1 okt. 2017 → 5 okt. 2017 |
Konference
Konference | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
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Land/Område | USA |
By | Cincinnati, Ohio |
Periode | 01/10/2017 → 05/10/2017 |