Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

Emanuel-Petre Eni; Szymon Beczkowski; Stig Munk-Nielsen; Tamas Kerekes; Remus Teodorescu

doi:10.1109/APEC.2016.7467988

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

Emanuel-Petre Eni, Szymon Beczkowski, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

27 Citationer (Scopus)

Abstract

The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

Originalsprog	Engelsk
Titel	Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider	5
Forlag	IEEE
Publikationsdato	mar. 2016
Sider	974 - 978
ISBN (Trykt)	978-1-4673-8393-6 , 978-1-4673-9551-9
ISBN (Elektronisk)	978-1-4673-9550-2
DOI	https://doi.org/10.1109/APEC.2016.7467988
Status	Udgivet - mar. 2016
Begivenhed	2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, USA Varighed: 20 mar. 2016 → 24 mar. 2016 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Konference

Konference	2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
Lokation	Long Beach Convention and Entertainment Center
Land/Område	USA
By	Long Beach
Periode	20/03/2016 → 24/03/2016
Internetadresse	http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

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10.1109/APEC.2016.7467988

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Citationsformater

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title = "Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET",

abstract = "The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.",

keywords = "4H-SiC MOSFET, Short-Circuit, Reliability, Device Characterization ",

author = "Emanuel-Petre Eni and Szymon Beczkowski and Stig Munk-Nielsen and Tamas Kerekes and Remus Teodorescu",

year = "2016",

month = mar,

doi = "10.1109/APEC.2016.7467988",

language = "English",

isbn = "978-1-4673-8393-6 ",

pages = "974 -- 978",

booktitle = "Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 20-03-2016 Through 24-03-2016",

url = "http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616",

}

Eni, E-P, Beczkowski, S , Munk-Nielsen, S , Kerekes, T & Teodorescu, R 2016, Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET. i Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, s. 974 - 978, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, USA, 20/03/2016. https://doi.org/10.1109/APEC.2016.7467988

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET. / Eni, Emanuel-Petre; Beczkowski, Szymon ; Munk-Nielsen, Stig et al.
Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. s. 974 - 978.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

AU - Eni, Emanuel-Petre

AU - Beczkowski, Szymon

AU - Munk-Nielsen, Stig

AU - Kerekes, Tamas

AU - Teodorescu, Remus

PY - 2016/3

Y1 - 2016/3

N2 - The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

AB - The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

KW - 4H-SiC MOSFET

KW - Short-Circuit

KW - Reliability

KW - Device Characterization

U2 - 10.1109/APEC.2016.7467988

DO - 10.1109/APEC.2016.7467988

M3 - Article in proceeding

SN - 978-1-4673-8393-6

SN - 978-1-4673-9551-9

SP - 974

EP - 978

BT - Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE

T2 - 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 20 March 2016 through 24 March 2016

ER -

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

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