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Abstract
Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.
Originalsprog | Engelsk |
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Titel | Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013 |
Antal sider | 9 |
Forlag | IEEE Press |
Publikationsdato | 2013 |
ISBN (Trykt) | 9781479901159 |
ISBN (Elektronisk) | 978-147990116-6, 9781479901142 |
DOI | |
Status | Udgivet - 2013 |
Begivenhed | EPE'13 ECCE Europe 15th European Conference on Power Electronics and Applications - Lille, Frankrig Varighed: 3 sep. 2013 → 5 sep. 2013 http://www.epe2013.com/ |
Konference
Konference | EPE'13 ECCE Europe 15th European Conference on Power Electronics and Applications |
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Land/Område | Frankrig |
By | Lille |
Periode | 03/09/2013 → 05/09/2013 |
Internetadresse |
Fingeraftryk
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IEPE: Intelligent and Efficient Power Electronics (IEPE)
The Danish National Advanced Technology Foundation
01/04/2012 → 31/03/2017
Projekter: Projekt › Forskning