TY - JOUR
T1 - The high frequency behaviour of high voltage and current IGBT modules
AU - Abbate, C.
AU - Busatto, G.
AU - Fratelli, L.
AU - Iannuzzo, F.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Sharp voltage gradients act as a stimulus for high power IGBT modules, which can exhibit a potentially instable high frequency behaviour. In fact, they can act as a radio frequency amplifier and, in particular operating conditions, the interaction between the device and the control or the external circuit can cause self-sustaining oscillations or the enhancement of the unevenness in current distribution inside a power module thus having a significant impact on the reliability of the power converter. Moreover, this RF amplification worsen the generated EMI (Electro Magnetic Interference). This paper presents an extensive experimental investigation about the high frequency behaviour of IGBT high power modules. The measurements were performed by means of an original experimental set-up that was specifically conceived and constructed. The data are analysed with the help of a theoretical small signal model which is able to describe RF behaviour of high power IGBT modules.
AB - Sharp voltage gradients act as a stimulus for high power IGBT modules, which can exhibit a potentially instable high frequency behaviour. In fact, they can act as a radio frequency amplifier and, in particular operating conditions, the interaction between the device and the control or the external circuit can cause self-sustaining oscillations or the enhancement of the unevenness in current distribution inside a power module thus having a significant impact on the reliability of the power converter. Moreover, this RF amplification worsen the generated EMI (Electro Magnetic Interference). This paper presents an extensive experimental investigation about the high frequency behaviour of IGBT high power modules. The measurements were performed by means of an original experimental set-up that was specifically conceived and constructed. The data are analysed with the help of a theoretical small signal model which is able to describe RF behaviour of high power IGBT modules.
UR - http://www.scopus.com/inward/record.url?scp=33747782079&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2006.07.068
DO - 10.1016/j.microrel.2006.07.068
M3 - Journal article
AN - SCOPUS:33747782079
SN - 0026-2714
VL - 46
SP - 1848
EP - 1853
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 9-11
ER -