A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

Lorenzo Ceccarelli; Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/APEC.2017.7930813

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

Lorenzo Ceccarelli, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

28 Citations (Scopus)

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Abstract

The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.

Original language	English
Title of host publication	Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	8
Publisher	IEEE Press
Publication date	Mar 2017
Pages	966-973
ISBN (Print)	978-1-5090-5366-7
DOIs	https://doi.org/10.1109/APEC.2017.7930813
Publication status	Published - Mar 2017
Event	2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa Convention Center, Tampa, FL, United States Duration: 26 Mar 2017 → 30 Mar 2017

Conference

Conference	2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Location	Tampa Convention Center
Country/Territory	United States
City	Tampa, FL
Period	26/03/2017 → 30/03/2017

Series	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	2470-6647

Keywords

SiC MOSFET
Modeling and simulation
Electrothermal simulation
PSpice
co-simulation

Access to Document

10.1109/APEC.2017.7930813

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC MOSFETsAccepted author manuscript, 1.43 MB

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

Cite this

@inproceedings{af68af48091b4a5491c5ed3d3b6e5514,

title = "A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs",

abstract = "The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT{\textquoteright}s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer{\textquoteright}s data.",

keywords = "SiC MOSFET, Modeling and simulation, Electrothermal simulation, PSpice, co-simulation",

author = "Lorenzo Ceccarelli and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Frede Blaabjerg",

year = "2017",

month = mar,

doi = "10.1109/APEC.2017.7930813",

language = "English",

isbn = "978-1-5090-5366-7",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "966--973",

booktitle = "Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)",

note = "2017 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 26-03-2017 Through 30-03-2017",

}

Ceccarelli, L, Bahman, AS , Iannuzzo, F & Blaabjerg, F 2017, A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. in Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 966-973, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, United States, 26/03/2017. https://doi.org/10.1109/APEC.2017.7930813

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. / Ceccarelli, Lorenzo; Bahman, Amir Sajjad ; Iannuzzo, Francesco et al.
Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2017. p. 966-973 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2017/3

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N2 - The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.

AB - The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.

KW - SiC MOSFET

KW - Modeling and simulation

KW - Electrothermal simulation

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KW - co-simulation

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DO - 10.1109/APEC.2017.7930813

M3 - Article in proceeding

SN - 978-1-5090-5366-7

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

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BT - Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Y2 - 26 March 2017 through 30 March 2017

ER -

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

Abstract

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Keywords

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Projects

Center Of Reliable Power Electronics (CORPE)

Cite this