A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Research output: Contribution to journalJournal article

Details

Original languageEnglish
JournalIEEE Transactions on Power Electronics
Number of pages11
ISSN0885-8993
DOI
StateE-pub ahead of print - 8 Jun 2018
Publication categoryResearch
Peer-reviewedYes

    Research areas

  • Semiconductor device packaging, power semiconductor switches, Circuit simulation

Projects

ID: 280648398