A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Abstract

Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.
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Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.
Original languageEnglish
Title of host publicationProceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems
Number of pages6
PublisherVDE Verlag GMBH
Publication dateMar 2018
Pages1-6
ISBN (Print)978-3-8007-4540-1
StatePublished - Mar 2018
Publication categoryResearch
Peer-reviewedYes
EventCIPS 2018 - 10th International Conference on Integrated Power Electronics Systems - Stuttgart, Germany
Duration: 20 Mar 201822 Mar 2018

Conference

ConferenceCIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
LandGermany
ByStuttgart
Periode20/03/201822/03/2018

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