A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli; P. D. Reigosa; F. Iannuzzo; F. Blaabjerg

doi:10.1016/j.microrel.2017.06.093

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli^*, P. D. Reigosa, F. Iannuzzo, F. Blaabjerg

^*Corresponding author for this work

Research output: Contribution to journal › Conference article in Journal › Research › peer-review

78 Citations (Scopus)

722 Downloads (Pure)

Abstract

The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

Original language	English
Journal	Microelectronics Reliability
Volume	76-77
Pages (from-to)	272-276
Number of pages	5
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2017.06.093
Publication status	Published - Sept 2017
Event	28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, France Duration: 25 Sept 2017 → 28 Sept 2017

Conference

Conference	28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Country/Territory	France
City	Bordeaux
Period	25/09/2017 → 28/09/2017

Keywords

Failure mechanisms
Short-circuit
Short-circuit ruggedness
SiC MOSFETs

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10.1016/j.microrel.2017.06.093

A Survey of SiC Power MOSFETs Short-CircuitAccepted author manuscript, 1.13 MBLicence: CC BY-NC-ND 4.0

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Cite this

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title = "A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis",

abstract = "The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.",

keywords = "Failure mechanisms, Short-circuit, Short-circuit ruggedness, SiC MOSFETs",

author = "L. Ceccarelli and Reigosa, {P. D.} and F. Iannuzzo and F. Blaabjerg",

year = "2017",

month = sep,

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language = "English",

volume = "76-77",

pages = "272--276",

journal = "Microelectronics Reliability",

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AU - Blaabjerg, F.

PY - 2017/9

Y1 - 2017/9

N2 - The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

AB - The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

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KW - Short-circuit ruggedness

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DO - 10.1016/j.microrel.2017.06.093

M3 - Conference article in Journal

AN - SCOPUS:85022087628

SN - 0026-2714

VL - 76-77

SP - 272

EP - 276

JO - Microelectronics Reliability

JF - Microelectronics Reliability

T2 - 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Y2 - 25 September 2017 through 28 September 2017

ER -

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Abstract

Conference

Keywords

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Center Of Reliable Power Electronics (CORPE)

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Cite this

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

Center Of Reliable Power Electronics (CORPE)

Activities

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Cite this