A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

Yaoqiang Duan; Yong Kang; Francesco Iannuzzo; Ionut Trintis; Frede Blaabjerg

doi:10.1109/APEC.2018.8341018

A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

Yaoqiang Duan, Yong Kang, Francesco Iannuzzo, Ionut Trintis, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

7 Citations (Scopus)

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Abstract

This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.

Original language	English
Title of host publication	IEEE Applied Power Electronics Conference and Exposition (APEC), 2018 : APEC 2018
Number of pages	6
Publisher	IEEE Press
Publication date	2018
Pages	249-254
ISBN (Print)	978-1-5386-1181-4
ISBN (Electronic)	978-1-5386-1180-7
DOIs	https://doi.org/10.1109/APEC.2018.8341018
Publication status	Published - 2018
Event	2018 IEEE Applied Power Electronics Conference and Exposition (APEC) - San Antonio, United States Duration: 4 Mar 2018 → 8 Mar 2018

Conference

Conference	2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country/Territory	United States
City	San Antonio
Period	04/03/2018 → 08/03/2018

Series	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	2470-6647

Keywords

FS-IGBT
Lumped-charge model
PN junction model
Temperature dependent

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10.1109/APEC.2018.8341018

01 A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

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@inproceedings{99384a2d91304742a433de7d8efa1f04,

title = "A Temperature Dependent Lumped-charge Model for Trench FS-IGBT",

abstract = "This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.",

keywords = "FS-IGBT, Lumped-charge model, PN junction model, Temperature dependent",

author = "Yaoqiang Duan and Yong Kang and Francesco Iannuzzo and Ionut Trintis and Frede Blaabjerg",

year = "2018",

doi = "10.1109/APEC.2018.8341018",

language = "English",

isbn = "978-1-5386-1181-4",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "249--254",

booktitle = "IEEE Applied Power Electronics Conference and Exposition (APEC), 2018",

note = "2018 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 04-03-2018 Through 08-03-2018",

}

Duan, Y, Kang, Y, Iannuzzo, F, Trintis, I & Blaabjerg, F 2018, A Temperature Dependent Lumped-charge Model for Trench FS-IGBT. in IEEE Applied Power Electronics Conference and Exposition (APEC), 2018: APEC 2018. IEEE Press, IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 249-254, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, Texas, United States, 04/03/2018. https://doi.org/10.1109/APEC.2018.8341018

A Temperature Dependent Lumped-charge Model for Trench FS-IGBT. / Duan, Yaoqiang; Kang, Yong; Iannuzzo, Francesco et al.
IEEE Applied Power Electronics Conference and Exposition (APEC), 2018: APEC 2018. IEEE Press, 2018. p. 249-254 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

AU - Duan, Yaoqiang

AU - Kang, Yong

AU - Iannuzzo, Francesco

AU - Trintis, Ionut

AU - Blaabjerg, Frede

PY - 2018

Y1 - 2018

N2 - This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.

AB - This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.

KW - FS-IGBT

KW - Lumped-charge model

KW - PN junction model

KW - Temperature dependent

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U2 - 10.1109/APEC.2018.8341018

DO - 10.1109/APEC.2018.8341018

M3 - Article in proceeding

SN - 978-1-5386-1181-4

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 249

EP - 254

BT - IEEE Applied Power Electronics Conference and Exposition (APEC), 2018

PB - IEEE Press

T2 - 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 4 March 2018 through 8 March 2018

ER -

A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

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Center Of Reliable Power Electronics (CORPE)

Cite this

A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

Abstract

Conference

Keywords

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Center Of Reliable Power Electronics (CORPE)

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