A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu; Huai Wang; Kristian Bonderup Pedersen; Ke Ma; Pramod Ghimire; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/TIA.2016.2540614

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Kristian Bonderup Pedersen, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

AAU Energy

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

Original language	English
Journal	I E E E Transactions on Industry Applications
Volume	52
Issue number	4
Pages (from-to)	3306 - 3314
Number of pages	9
ISSN	0093-9994
DOIs	https://doi.org/10.1109/TIA.2016.2540614
Publication status	Published - Jul 2016

Keywords

Temperature measurement
Insulated gate bipolar transistors (IGBTs)
Modeling
Power semiconductor devices
Semiconductor device reliability

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10.1109/TIA.2016.2540614

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title = "A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations",

abstract = "A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.",

keywords = "Temperature measurement, Insulated gate bipolar transistors (IGBTs), Modeling, Power semiconductor devices, Semiconductor device reliability ",

author = "Rui Wu and Huai Wang and Pedersen, {Kristian Bonderup} and Ke Ma and Pramod Ghimire and Francesco Iannuzzo and Frede Blaabjerg",

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language = "English",

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T1 - A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

AU - Wu, Rui

AU - Wang, Huai

AU - Pedersen, Kristian Bonderup

AU - Ma, Ke

AU - Ghimire, Pramod

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2016/7

Y1 - 2016/7

N2 - A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

AB - A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

KW - Temperature measurement

KW - Insulated gate bipolar transistors (IGBTs)

KW - Modeling

KW - Power semiconductor devices

KW - Semiconductor device reliability

U2 - 10.1109/TIA.2016.2540614

DO - 10.1109/TIA.2016.2540614

M3 - Journal article

SN - 0093-9994

VL - 52

SP - 3306

EP - 3314

JO - I E E E Transactions on Industry Applications

JF - I E E E Transactions on Industry Applications

IS - 4

ER -

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

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