Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules

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Abstract

This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then,
an improved in situ junction temperature estimation method using on-state collector–emitter voltage VCE ON and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physicsof-failure analysis of tested IGBT modules is provided.
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This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then,
an improved in situ junction temperature estimation method using on-state collector–emitter voltage VCE ON and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physicsof-failure analysis of tested IGBT modules is provided.
Original languageEnglish
JournalI E E E Transactions on Power Electronics
Volume31
Issue number12
Pages (from-to)8371-8386
Number of pages16
ISSN0885-8993
DOI
StatePublished - Dec 2016
Publication categoryResearch
Peer-reviewedYes

    Research areas

  • Failure mechanism, Insulated-gate bipolar tran-sistor module, Lifetime model, Power cycling test, Physics-of-failure, Reliability

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