Abstract
A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of ΔTj=60 °C, mean temperature Tjm=145 °C and the maximum Tj=175 °C. By means of device analyzer, the degraded conditions of electrical parameters after power cycling test are fully investigated and compared. As a result, the effects of degradation on the static and dynamic characteristics during conventional operation are discussed. Finally, the research results can help examine the failure precursors and then estimate the remaining useful lifetime of SiC MOSFET modules.
| Original language | English |
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| Title of host publication | Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
| Publisher | IEEE Press |
| Publication date | Oct 2017 |
| ISBN (Electronic) | 978-1-5090-2998-3 |
| DOIs | |
| Publication status | Published - Oct 2017 |
| Event | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, United States Duration: 1 Oct 2017 → 5 Oct 2017 |
Conference
| Conference | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
|---|---|
| Country/Territory | United States |
| City | Cincinnati, Ohio |
| Period | 01/10/2017 → 05/10/2017 |
Keywords
- Silicon carbide
- Power MOSFET
- Power cycling test
- Device analysis
- Aging precursor