An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen; Huai Wang; Zhan Shen; Frede Blaabjerg; Zian Qin

doi:10.1109/APEC.2018.8341123

An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen, Huai Wang, Zhan Shen, Frede Blaabjerg, Zian Qin

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

8 Citations (Scopus)

Abstract

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

Original language	English
Title of host publication	2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	6
Publisher	IEEE Press
Publication date	Mar 2018
Pages	913-918
ISBN (Print)	978-1-5386-1181-4
ISBN (Electronic)	978-1-5386-1180-7
DOIs	https://doi.org/10.1109/APEC.2018.8341123
Publication status	Published - Mar 2018
Event	2018 IEEE Applied Power Electronics Conference and Exposition (APEC) - San Antonio, United States Duration: 4 Mar 2018 → 8 Mar 2018

Conference

Conference	2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country/Territory	United States
City	San Antonio
Period	04/03/2018 → 08/03/2018

Keywords

GaN eHEMTs
Turn-on
Power loss model

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10.1109/APEC.2018.8341123

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Cite this

@inproceedings{7bd3d65ae48f4c6abb91d5e6e13a1a3b,

title = "An analytical turn-on power loss model for 650-V GaN eHEMTs",

abstract = "This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.",

keywords = "GaN eHEMTs, Turn-on, Power loss model",

author = "Yanfeng Shen and Huai Wang and Zhan Shen and Frede Blaabjerg and Zian Qin",

year = "2018",

month = mar,

doi = "10.1109/APEC.2018.8341123",

language = "English",

isbn = "978-1-5386-1181-4",

pages = "913--918",

booktitle = "2018 IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

note = "2018 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 04-03-2018 Through 08-03-2018",

}

Shen, Y, Wang, H, Shen, Z, Blaabjerg, F & Qin, Z 2018, An analytical turn-on power loss model for 650-V GaN eHEMTs. in 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, pp. 913-918, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, Texas, United States, 04/03/2018. https://doi.org/10.1109/APEC.2018.8341123

TY - GEN

T1 - An analytical turn-on power loss model for 650-V GaN eHEMTs

AU - Shen, Yanfeng

AU - Wang, Huai

AU - Shen, Zhan

AU - Blaabjerg, Frede

AU - Qin, Zian

PY - 2018/3

Y1 - 2018/3

N2 - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

AB - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

KW - GaN eHEMTs

KW - Turn-on

KW - Power loss model

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U2 - 10.1109/APEC.2018.8341123

DO - 10.1109/APEC.2018.8341123

M3 - Article in proceeding

SN - 978-1-5386-1181-4

SP - 913

EP - 918

BT - 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

T2 - 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 4 March 2018 through 8 March 2018

ER -

An analytical turn-on power loss model for 650-V GaN eHEMTs

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