Abstract
Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-the-art research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.
Original language | English |
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Title of host publication | Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013 |
Number of pages | 7 |
Publisher | IEEE Press |
Publication date | Nov 2013 |
Pages | 507-513 |
ISBN (Print) | 978-1-4799-0223-1 |
ISBN (Electronic) | 978-1-4799-0224-8 |
DOIs | |
Publication status | Published - Nov 2013 |
Event | 39th Annual Conference of the IEEE Industrial Electronics Society - Wien, Austria Duration: 10 Nov 2013 → 13 Nov 2013 |
Conference
Conference | 39th Annual Conference of the IEEE Industrial Electronics Society |
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Country/Territory | Austria |
City | Wien |
Period | 10/11/2013 → 13/11/2013 |
Keywords
- Insulated Gate Bipolar Transistor
- Power electronics
- Catastrophic failure
- Fault torlerant circuit