@inproceedings{bdbaedbd264a49e998bc2e40d331bba0,
title = "Design of a high-efficiency GaN HEMT RF power amplifier",
abstract = "Highly efficient radio frequency power amplifiers are essential in modern wireless transmitter systems. This paper presents the analysis, design and simulation of a 2GHz high-efficiency class-J RF power amplifier for wireless communications. A commercially available RF power 6W Gallium Nitride high-electron-mobility transistor is used as the core of the amplifier. By optimizing the load impedance up to the third-order harmonic, the needed output voltage and current waveforms, which are desired according to the class-J operation mode, are realized. The simulated maximum power - Added-efficiency reaches 77.1% with output power of 40.5dBm at input drive of 27 dBm. Through simulations it also shows that high efficiency is sustained during a bandwidth of 200-300 MHz.",
keywords = "class-J, GaN HEMT, high efficiency, load-pull, Power amplifier",
author = "Yelin Wang and Torben Larsen",
year = "2015",
month = aug,
day = "14",
doi = "10.1109/ISSCS.2015.7203934",
language = "English",
isbn = "9781467374873",
series = "International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings",
publisher = "IEEE Press",
booktitle = "Signals, Circuits and Systems (ISSCS), 2015 International Symposium on",
note = "12th International Symposium on Signals, Circuits and Systems, ISSCS 2015 ; Conference date: 09-07-2015 Through 10-07-2015",
}