Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

Rui Wu; Francesco Iannuzzo; Huai Wang; Frede Blaabjerg

doi:10.1109/RAMS.2015.7105151

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

Rui Wu, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

12 Citations (Scopus)

1166 Downloads (Pure)

Abstract

A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach’s capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.

Original language	English
Title of host publication	Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS)
Number of pages	7
Publisher	IEEE Press
Publication date	Jan 2015
Pages	1-7
ISBN (Print)	978-1-4799-6702-5
DOIs	https://doi.org/10.1109/RAMS.2015.7105151
Publication status	Published - Jan 2015
Event	2015 Annual Reliability and Maintainability Symposium (RAMS) - Palm Harbor, FL, USA , United States Duration: 26 Jan 2015 → 29 Jan 2015

Conference

Conference	2015 Annual Reliability and Maintainability Symposium (RAMS)
Country/Territory	United States
City	Palm Harbor, FL, USA
Period	26/01/2015 → 29/01/2015

Keywords

Insulated Gate Bipolar Transistor (IGBT)
Short-circuit
Electro-Thermal Model
Power Module

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10.1109/RAMS.2015.7105151

Electro-Thermal Modeling of High Power IGBT Module Short-Circuits with Experimental ValidationSubmitted manuscript, 421 KB

AUB Link

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

Cite this

@inproceedings{a878b4fe58f8417babb7748d8193666d,

title = "Electro-thermal modeling of high power IGBT module short-circuits with experimental validation",

abstract = "A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach{\textquoteright}s capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.",

keywords = "Insulated Gate Bipolar Transistor (IGBT), Short-circuit, Electro-Thermal Model, Power Module",

author = "Rui Wu and Francesco Iannuzzo and Huai Wang and Frede Blaabjerg",

year = "2015",

month = jan,

doi = "10.1109/RAMS.2015.7105151",

language = "English",

isbn = "978-1-4799-6702-5 ",

pages = "1--7",

booktitle = "Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS)",

publisher = "IEEE Press",

note = "2015 Annual Reliability and Maintainability Symposium (RAMS) ; Conference date: 26-01-2015 Through 29-01-2015",

}

Wu, R, Iannuzzo, F , Wang, H & Blaabjerg, F 2015, Electro-thermal modeling of high power IGBT module short-circuits with experimental validation. in Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS). IEEE Press, pp. 1-7, 2015 Annual Reliability and Maintainability Symposium (RAMS), Palm Harbor, FL, USA , United States, 26/01/2015. https://doi.org/10.1109/RAMS.2015.7105151

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation. / Wu, Rui; Iannuzzo, Francesco ; Wang, Huai et al.
Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS). IEEE Press, 2015. p. 1-7.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

AU - Wu, Rui

AU - Iannuzzo, Francesco

AU - Wang, Huai

AU - Blaabjerg, Frede

PY - 2015/1

Y1 - 2015/1

N2 - A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach’s capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.

AB - A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach’s capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.

KW - Insulated Gate Bipolar Transistor (IGBT)

KW - Short-circuit

KW - Electro-Thermal Model

KW - Power Module

U2 - 10.1109/RAMS.2015.7105151

DO - 10.1109/RAMS.2015.7105151

M3 - Article in proceeding

SN - 978-1-4799-6702-5

SP - 1

EP - 7

BT - Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS)

PB - IEEE Press

T2 - 2015 Annual Reliability and Maintainability Symposium (RAMS)

Y2 - 26 January 2015 through 29 January 2015

ER -

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

Abstract

Conference

Keywords

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Projects

Center Of Reliable Power Electronics (CORPE)

Cite this