From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces
Publication: Research - peer-review › Journal article
Standard
From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces. / Morgen, P.; Jensen, T.; Gundelach, S. V.; Hoffmann, S. V.; Pedersen, Kjeld.
In: Computational Materials Science, Vol. 21, 2001, p. 481-487.Publication: Research - peer-review › Journal article
Harvard
Morgen, P, Jensen, T, Gundelach, SV, Hoffmann, SV & Pedersen, K 2001, 'From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces' Computational Materials Science, vol 21, pp. 481-487.
APA
Morgen, P., Jensen, T., Gundelach, S. V., Hoffmann, S. V., & Pedersen, K. (2001). From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces. Computational Materials Science, 21, 481-487
CBE
Morgen P, Jensen T, Gundelach SV, Hoffmann SV, Pedersen K. 2001. From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces. Computational Materials Science. 21:481-487.
MLA
Morgen, P. et al."From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces". Computational Materials Science. 2001, 21. 481-487.
Vancouver
Morgen P, Jensen T, Gundelach SV, Hoffmann SV, Pedersen K. From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces. Computational Materials Science. 2001;21:481-487.
Author
Bibtex
@article{d824c2f0809211db8b97000ea68e967b,
title = "From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces",
publisher = "Elsevier BV",
author = "P. Morgen and T. Jensen and Gundelach, {S. V.} and Hoffmann, {S. V.} and Kjeld Pedersen",
year = "2001",
volume = "21",
pages = "481--487",
journal = "Computational Materials Science",
issn = "0927-0256",
}
RIS
TY - JOUR
T1 - From Oxygen Adsorption to the Growth of Thin Oxides on Silicon Surfaces
A1 - Morgen,P.
A1 - Jensen,T.
A1 - Gundelach,S. V.
A1 - Hoffmann,S. V.
A1 - Pedersen,Kjeld
AU - Morgen,P.
AU - Jensen,T.
AU - Gundelach,S. V.
AU - Hoffmann,S. V.
AU - Pedersen,Kjeld
PB - Elsevier BV
PY - 2001
Y1 - 2001
KW - Oxide formation
KW - Oxide formation
JO - Computational Materials Science
JF - Computational Materials Science
SN - 0927-0256
VL - 21
SP - 481
EP - 487
ER -