Abstract
The advent of the silicon carbide (SiC) power device with high voltage stress would simplify the power applications since two-level topologies would be possible to instead three-level (TL) based topologies. This paper proposes a full-bridge (FB) T-type isolated DC/DC converter composed of four main power switches with high voltage stress (SiC MOSFET) and four auxiliary power switches with low voltage stress (Si MOSFET). Therefore, comparing with the conventional diode-clamped FB TL isolated DC/DC converter, the proposed converter has fewer circuit components and simpler circuit structure. What is more, a corresponding control strategy is proposed, which can not only realize zero-voltage switching (ZVS) but also achieve wide input voltage range. Finally, simulation and experimental results are both presented for verification.
| Original language | English |
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| Title of host publication | Proceedings of IPEC 2018 ECCE Asia |
| Number of pages | 6 |
| Publisher | IEEE |
| Publication date | May 2018 |
| Pages | 2708-2713 |
| ISBN (Print) | 978-1-5386-4190-3 |
| ISBN (Electronic) | 978-4-88686-405-5 |
| DOIs | |
| Publication status | Published - May 2018 |
| Event | The 2018 International Power Electronics Conference - Niigata, Japan Duration: 20 May 2018 → 24 May 2018 |
Conference
| Conference | The 2018 International Power Electronics Conference |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 20/05/2018 → 24/05/2018 |
Keywords
- DC/DC converter
- Full-bridge (FB)
- T-type
- Wide input voltage range