GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement

Yelin Wang, Nielsen T.S., Ole Kiel Jensen, Torben Larsen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publicationSignals, Circuits and Systems (ISSCS), 2015 International Symposium on
Number of pages6
Place of PublicationRumænien
PublisherIEEE Press
Publication date14 Aug 2015
Article number7203963
ISBN (Print)978-1-4673-7488-0
DOIs
Publication statusPublished - 14 Aug 2015
Event12th International Symposium on Signals, Circuits and Systems, ISSCS 2015 - Iasi
Duration: 9 Jul 201510 Jul 2015

Conference

Conference12th International Symposium on Signals, Circuits and Systems, ISSCS 2015
CityIasi
Period09/07/201510/07/2015
SeriesInternational Symposium on Signals, Circuits and Systems (ISSCS). Proceedings

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