Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

Dipen Narendra Dalal; Nicklas Christensen; Asger Bjørn Jørgensen; Simon Dyhr Sønderskov; Szymon Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.23919/EPE17ECCEEurope.2017.8099274

Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

Dipen Narendra Dalal, Nicklas Christensen, Asger Bjørn Jørgensen, Simon Dyhr Sønderskov, Szymon Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

42 Citations (Scopus)

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Abstract

This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.

Original language	English
Title of host publication	Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Number of pages	10
Publisher	IEEE Press
Publication date	Sept 2017
ISBN (Electronic)	978-90-75815-27-6
DOIs	https://doi.org/10.23919/EPE17ECCEEurope.2017.8099274
Publication status	Published - Sept 2017
Event	2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Poland Duration: 11 Sept 2017 → 14 Sept 2017

Conference

Conference	2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Country/Territory	Poland
City	Warsaw
Period	11/09/2017 → 14/09/2017

Keywords

Wide bandgap devices
Silicon carbide (SiC)
MOSFET
New switching devices
EMC/EMI

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10.23919/EPE17ECCEEurope.2017.8099274

Accepted author manuscriptAccepted author manuscript, 1.08 MB

http://ieeexplore.ieee.org/document/8099274/

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Dalal, D. N., Christensen, N., Jørgensen, A. B., Sønderskov, S. D., Beczkowski, S., Uhrenfeldt, C., & Munk-Nielsen, S. (2017). Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter. In Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) IEEE Press. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099274

@inproceedings{9183e37a9fd7442f8906fad096aff89a,

title = "Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter",

abstract = "This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.",

keywords = "Wide bandgap devices, Silicon carbide (SiC), MOSFET, New switching devices, EMC/EMI",

author = "Dalal, {Dipen Narendra} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and S{\o}nderskov, {Simon Dyhr} and Szymon Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2017",

month = sep,

doi = "10.23919/EPE17ECCEEurope.2017.8099274",

language = "English",

booktitle = "Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)",

publisher = "IEEE Press",

note = "2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ; Conference date: 11-09-2017 Through 14-09-2017",

}

Dalal, DN, Christensen, N, Jørgensen, AB, Sønderskov, SD, Beczkowski, S, Uhrenfeldt, C & Munk-Nielsen, S 2017, Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter. in Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland, 11/09/2017. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099274

Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter. / Dalal, Dipen Narendra; Christensen, Nicklas; Jørgensen, Asger Bjørn et al.
Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press, 2017.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

AU - Dalal, Dipen Narendra

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Sønderskov, Simon Dyhr

AU - Beczkowski, Szymon

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2017/9

Y1 - 2017/9

N2 - This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.

AB - This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.

KW - Wide bandgap devices

KW - Silicon carbide (SiC)

KW - MOSFET

KW - New switching devices

KW - EMC/EMI

U2 - 10.23919/EPE17ECCEEurope.2017.8099274

DO - 10.23919/EPE17ECCEEurope.2017.8099274

M3 - Article in proceeding

BT - Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

PB - IEEE Press

T2 - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

Y2 - 11 September 2017 through 14 September 2017

ER -

Dalal DN, Christensen N, Jørgensen AB, Sønderskov SD, Beczkowski S, Uhrenfeldt C et al. Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter. In Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press. 2017 doi: 10.23919/EPE17ECCEEurope.2017.8099274

Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

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