General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

Amir Sajjad Bahman; Ke Ma; Frede Blaabjerg

doi:10.1109/APEC.2016.7467882

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

Amir Sajjad Bahman, Ke Ma, Frede Blaabjerg

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

21 Citations (Scopus)

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Abstract

Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.

Original language	English
Title of host publication	Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	8
Publisher	IEEE
Publication date	Mar 2016
Pages	261 - 268
ISBN (Print)	978-1-4673-8393-6 , 978-1-4673-9551-9
ISBN (Electronic)	978-1-4673-9550-2
DOIs	https://doi.org/10.1109/APEC.2016.7467882
Publication status	Published - Mar 2016
Event	2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, United States Duration: 20 Mar 2016 → 24 Mar 2016 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Conference

Conference	2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
Location	Long Beach Convention and Entertainment Center
Country/Territory	United States
City	Long Beach
Period	20/03/2016 → 24/03/2016
Internet address	http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Keywords

Insulated gate bipolar transistors
Thermal modeling
Boundary conditions
Finite element method
Reliability
Power electronic converters

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10.1109/APEC.2016.7467882

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT ModulesAccepted author manuscript, 1.42 MB

AUB Link

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

Cite this

@inproceedings{1e812ebac49f419193a5c82b7a74c1bd,

title = "General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules",

abstract = "Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.",

keywords = "Insulated gate bipolar transistors, Thermal modeling, Boundary conditions, Finite element method, Reliability, Power electronic converters",

author = "Bahman, {Amir Sajjad} and Ke Ma and Frede Blaabjerg",

year = "2016",

month = mar,

doi = "10.1109/APEC.2016.7467882",

language = "English",

isbn = "978-1-4673-8393-6 ",

pages = "261 -- 268",

booktitle = "Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 20-03-2016 Through 24-03-2016",

url = "http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616",

}

Bahman, AS, Ma, K & Blaabjerg, F 2016, General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. in Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, pp. 261 - 268, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, United States, 20/03/2016. https://doi.org/10.1109/APEC.2016.7467882

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. / Bahman, Amir Sajjad; Ma, Ke; Blaabjerg, Frede.
Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. p. 261 - 268.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

AU - Bahman, Amir Sajjad

AU - Ma, Ke

AU - Blaabjerg, Frede

PY - 2016/3

Y1 - 2016/3

N2 - Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.

AB - Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.

KW - Insulated gate bipolar transistors

KW - Thermal modeling

KW - Boundary conditions

KW - Finite element method

KW - Reliability

KW - Power electronic converters

U2 - 10.1109/APEC.2016.7467882

DO - 10.1109/APEC.2016.7467882

M3 - Article in proceeding

SN - 978-1-4673-8393-6

SN - 978-1-4673-9551-9

SP - 261

EP - 268

BT - Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE

T2 - 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 20 March 2016 through 24 March 2016

ER -

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

Abstract

Conference

Keywords

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Projects

Center Of Reliable Power Electronics (CORPE)

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