Electro-thermal model of power semiconductors dedicated for both case and junction temperature estimation

Ke Ma, Frede Blaabjerg, Marco Liserre

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

14 Citations (Scopus)

Abstract

The Foster type electro-thermal RC network inside power semiconductor device is normally provided by manufacturers for junction temperature estimation. However it will result in inaccuracy or error when further attaching the Foster network with thermal impedances of heat sink or thermal grease, which are essential components outside power semiconductor devices and will determine the device case temperature level. In order to overcome this unsolved problem, a new thermal model is proposed and verified by simulation in this paper. It is concluded that by the proposed thermal model, it is possible to extend the Foster thermal network inside power semiconductor device, achieving relative more accurate estimation of both junction and case temperature.
Original languageEnglish
Title of host publicationProceedings of PCIM Europe 2013
Number of pages5
PublisherVDE Verlag GMBH
Publication dateMay 2013
Pages1042-1046
ISBN (Print)978-3-8007-3505-1
Publication statusPublished - May 2013
EventPCIM Europe 2013 - Nuremberg, Germany
Duration: 14 May 201316 May 2013

Conference

ConferencePCIM Europe 2013
Country/TerritoryGermany
CityNuremberg
Period14/05/201316/05/2013

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