Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Lorenzo Ceccarelli; Paula Diaz Reigosa; Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/IECON.2017.8216842

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

8 Citations (Scopus)

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Abstract

A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed in this paper. The model has been implemented in PSpice and describes the internal structure of the module, including stray elements in the multi-chip layout, self-heating effect, drain leakage current and threshold voltage mismatch. A lumped-parameter thermal network is extracted in order to estimate the internal temperature of the chips. The case study is a half-bridge power module from CREE with 1.2 kV breakdown voltage and about 300 A rated current. The short-circuit behavior of the module is investigated experimentally through a non-destructive test setup and the model is validated. The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules.

Original language	English
Title of host publication	Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Number of pages	6
Publisher	IEEE Press
Publication date	Oct 2017
Pages	4879-4884
ISBN (Electronic)	978-1-5386-1127-2
DOIs	https://doi.org/10.1109/IECON.2017.8216842
Publication status	Published - Oct 2017
Event	43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, China Duration: 29 Oct 2017 → 1 Nov 2017

Conference

Conference	43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Country/Territory	China
City	Beijing
Period	29/10/2017 → 01/11/2017
Sponsor	Chinese Association of Automation (CAA), Chinese Power Supply Society, et al., IEEE Industrial Electronics Society (IES), Systems Engineering Society of China, The Institute of Electrical and Electronics Engineers (IEEE)

Series	Proceedings of the Annual Conference of the IEEE Industrial Electronics Society
ISSN	1553-572X

Keywords

Silicon carbide
Power MOSFET
Modeling
Short-circuit

Access to Document

10.1109/IECON.2017.8216842

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditionsAccepted author manuscript, 1.55 MB

AUB Link

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

43rd Annual Conference of IEEE Industrial Electronics Society (IECON 2017)
Lorenzo Ceccarelli (Lecturer)
29 Oct 2017 → 1 Nov 2017
Activity: Talks and presentations › Conference presentations

Cite this

Ceccarelli, Lorenzo ; Reigosa, Paula Diaz ; Bahman, Amir Sajjad et al. / Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, 2017. pp. 4879-4884 (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

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title = "Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions",

abstract = "A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed in this paper. The model has been implemented in PSpice and describes the internal structure of the module, including stray elements in the multi-chip layout, self-heating effect, drain leakage current and threshold voltage mismatch. A lumped-parameter thermal network is extracted in order to estimate the internal temperature of the chips. The case study is a half-bridge power module from CREE with 1.2 kV breakdown voltage and about 300 A rated current. The short-circuit behavior of the module is investigated experimentally through a non-destructive test setup and the model is validated. The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules.",

keywords = "Silicon carbide, Power MOSFET, Modeling, Short-circuit",

author = "Lorenzo Ceccarelli and Reigosa, {Paula Diaz} and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Frede Blaabjerg",

year = "2017",

month = oct,

doi = "10.1109/IECON.2017.8216842",

language = "English",

series = "Proceedings of the Annual Conference of the IEEE Industrial Electronics Society",

publisher = "IEEE Press",

pages = "4879--4884",

booktitle = "Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017",

note = "43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 ; Conference date: 29-10-2017 Through 01-11-2017",

}

Ceccarelli, L, Reigosa, PD, Bahman, AS , Iannuzzo, F & Blaabjerg, F 2017, Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. in Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 4879-4884, 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017, Beijing, China, 29/10/2017. https://doi.org/10.1109/IECON.2017.8216842

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. / Ceccarelli, Lorenzo; Reigosa, Paula Diaz; Bahman, Amir Sajjad et al.
Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, 2017. p. 4879-4884 (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

AU - Ceccarelli, Lorenzo

AU - Reigosa, Paula Diaz

AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2017/10

Y1 - 2017/10

N2 - A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed in this paper. The model has been implemented in PSpice and describes the internal structure of the module, including stray elements in the multi-chip layout, self-heating effect, drain leakage current and threshold voltage mismatch. A lumped-parameter thermal network is extracted in order to estimate the internal temperature of the chips. The case study is a half-bridge power module from CREE with 1.2 kV breakdown voltage and about 300 A rated current. The short-circuit behavior of the module is investigated experimentally through a non-destructive test setup and the model is validated. The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules.

AB - A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed in this paper. The model has been implemented in PSpice and describes the internal structure of the module, including stray elements in the multi-chip layout, self-heating effect, drain leakage current and threshold voltage mismatch. A lumped-parameter thermal network is extracted in order to estimate the internal temperature of the chips. The case study is a half-bridge power module from CREE with 1.2 kV breakdown voltage and about 300 A rated current. The short-circuit behavior of the module is investigated experimentally through a non-destructive test setup and the model is validated. The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules.

KW - Silicon carbide

KW - Power MOSFET

KW - Modeling

KW - Short-circuit

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DO - 10.1109/IECON.2017.8216842

M3 - Article in proceeding

T3 - Proceedings of the Annual Conference of the IEEE Industrial Electronics Society

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BT - Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017

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T2 - 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017

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ER -

Ceccarelli L, Reigosa PD, Bahman AS , Iannuzzo F , Blaabjerg F. Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. In Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press. 2017. p. 4879-4884. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society). doi: 10.1109/IECON.2017.8216842

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Abstract

Conference

Keywords

Access to Document

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Projects

Center Of Reliable Power Electronics (CORPE)

Activities

43rd Annual Conference of IEEE Industrial Electronics Society (IECON 2017)

Cite this