Abstract
Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.
Original language | English |
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Journal | I E E E Transactions on Power Electronics |
Volume | 32 |
Issue number | 10 |
Pages (from-to) | 7816 - 7823 |
Number of pages | 8 |
ISSN | 0885-8993 |
DOIs | |
Publication status | Published - Oct 2017 |
Keywords
- DBC layout
- Power module
- Auxiliary connection
- SiC MOSFET