Effects of Auxiliary-Source Connection in Multichip Power Module

Helong Li; Stig Munk-Nielsen; Xiongfei Wang; Szymon Beczkowski; Steve Jones; Xiaoping Dai

doi:10.1109/TPEL.2016.2639327

Effects of Auxiliary-Source Connection in Multichip Power Module

Helong Li, Stig Munk-Nielsen, Xiongfei Wang, Szymon Beczkowski, Steve Jones, Xiaoping Dai

Research output: Contribution to journal › Journal article › Research › peer-review

40 Citations (Scopus)

Abstract

Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.

Original language	English
Journal	I E E E Transactions on Power Electronics
Volume	32
Issue number	10
Pages (from-to)	7816 - 7823
Number of pages	8
ISSN	0885-8993
DOIs	https://doi.org/10.1109/TPEL.2016.2639327
Publication status	Published - Oct 2017

Keywords

DBC layout
Power module
Auxiliary connection
SiC MOSFET

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title = "Effects of Auxiliary-Source Connection in Multichip Power Module",

abstract = "Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.",

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author = "Helong Li and Stig Munk-Nielsen and Xiongfei Wang and Szymon Beczkowski and Steve Jones and Xiaoping Dai",

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T1 - Effects of Auxiliary-Source Connection in Multichip Power Module

AU - Li, Helong

AU - Munk-Nielsen, Stig

AU - Wang, Xiongfei

AU - Beczkowski, Szymon

AU - Jones, Steve

AU - Dai, Xiaoping

PY - 2017/10

Y1 - 2017/10

N2 - Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.

AB - Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.

KW - DBC layout

KW - Power module

KW - Auxiliary connection

KW - SiC MOSFET

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DO - 10.1109/TPEL.2016.2639327

M3 - Journal article

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SP - 7816

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JO - I E E E Transactions on Power Electronics

JF - I E E E Transactions on Power Electronics

IS - 10

ER -

Effects of Auxiliary-Source Connection in Multichip Power Module

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