Experimental evaluation of IGBT junction temperature measurement via peak gate current

Nick Baker; Stig Munk-Nielsen; Francesco Iannuzzo; Laurent Dupont; Marco Liserre

doi:10.1109/EPE.2015.7311733

Experimental evaluation of IGBT junction temperature measurement via peak gate current

Nick Baker, Stig Munk-Nielsen, Francesco Iannuzzo, Laurent Dupont, Marco Liserre

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

13 Citations (Scopus)

Abstract

Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.

Original language	English
Title of host publication	17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015
Number of pages	11
Publisher	IEEE Press
Publication date	Sept 2015
Pages	1-11
ISBN (Print)	9781479982776
DOIs	https://doi.org/10.1109/EPE.2015.7311733
Publication status	Published - Sept 2015
Event	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Switzerland Duration: 8 Sept 2015 → 10 Sept 2015

Conference

Conference	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Location	Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
Country/Territory	Switzerland
City	Geneva
Period	08/09/2015 → 10/09/2015

Keywords

IGBT
Reliability
Thermal Design
MOSFET

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10.1109/EPE.2015.7311733

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@inproceedings{a821976d016a4d649c7c7f87d3cb6556,

title = "Experimental evaluation of IGBT junction temperature measurement via peak gate current",

abstract = "Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.",

keywords = "IGBT, Reliability, Thermal Design, MOSFET",

author = "Nick Baker and Stig Munk-Nielsen and Francesco Iannuzzo and Laurent Dupont and Marco Liserre",

year = "2015",

month = sep,

doi = "10.1109/EPE.2015.7311733",

language = "English",

isbn = "9781479982776",

pages = "1--11",

booktitle = "17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015",

publisher = "IEEE Press",

note = "17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, IEEE ECCE-EPE 2015 ; Conference date: 08-09-2015 Through 10-09-2015",

}

Baker, N, Munk-Nielsen, S , Iannuzzo, F, Dupont, L & Liserre, M 2015, Experimental evaluation of IGBT junction temperature measurement via peak gate current. in 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015. IEEE Press, pp. 1-11, 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Switzerland, 08/09/2015. https://doi.org/10.1109/EPE.2015.7311733

Experimental evaluation of IGBT junction temperature measurement via peak gate current. / Baker, Nick; Munk-Nielsen, Stig ; Iannuzzo, Francesco et al.
17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015. IEEE Press, 2015. p. 1-11.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Experimental evaluation of IGBT junction temperature measurement via peak gate current

AU - Baker, Nick

AU - Munk-Nielsen, Stig

AU - Iannuzzo, Francesco

AU - Dupont, Laurent

AU - Liserre, Marco

PY - 2015/9

Y1 - 2015/9

N2 - Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.

AB - Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this method. Temperature measurements are made on IGBTs operating under steady state power dissipation. The peak gate current is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current.

KW - IGBT

KW - Reliability

KW - Thermal Design

KW - MOSFET

U2 - 10.1109/EPE.2015.7311733

DO - 10.1109/EPE.2015.7311733

M3 - Article in proceeding

SN - 9781479982776

SP - 1

EP - 11

BT - 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015

PB - IEEE Press

T2 - 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Y2 - 8 September 2015 through 10 September 2015

ER -

Experimental evaluation of IGBT junction temperature measurement via peak gate current

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Keywords

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