Abstract
Temperature estimation is of great importance for performance and reliability of IGBT power modules in converter operation as well as in active power cycling tests. It is common to be estimated through Thermo-Sensitive Electrical Parameters such as the forward voltage drop (Vce) of the chip. This experimental work evaluates the validity and accuracy of two Vce based methods applied on high power IGBT modules during power cycling tests. The first method estimates the chip temperature when low sense current is applied and the second method when normal load current is present. Finally, a correction factor that eliminates the series resistance contribution on the Vce measured at high current, is proposed.
| Original language | English |
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| Title of host publication | Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) |
| Number of pages | 9 |
| Publisher | IEEE Press |
| Publication date | Sept 2015 |
| DOIs | |
| Publication status | Published - Sept 2015 |
| Event | 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Switzerland Duration: 8 Sept 2015 → 10 Sept 2015 |
Conference
| Conference | 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 |
|---|---|
| Location | Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20 |
| Country/Territory | Switzerland |
| City | Geneva |
| Period | 08/09/2015 → 10/09/2015 |
Keywords
- IGBT high power modules
- Chip temperature
- Power cycling
- Vce measurement
- IR thermography