Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method

Adrian Augustin Hasmasan, Christian Busca, Remus Teodorescu, Lars Helle

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

15 Citations (Scopus)

Abstract

In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insulated gate bipolar transistors) is presented, which can be used to calculate the clamping force distribution among chips under various clamping conditions. The clamping force is an important parameter for the chip, because it influences contact electrical resistance, contact thermal resistance and power cycling capability. Ideally, the clamping force should be equally distributed among chips, in order to maximize the reliability of the PP IGBT. The model is built around a hypothetical PP IGBT with 9 chips, and it has numerous simplifications in order to reduce the simulation time as much as possible. The developed model is used to analyze the clamping force distribution among chips, in various study cases, where uniform and non-uniform clamping pressures are applied on the studied PP IGBT.
Original languageEnglish
Title of host publicationProceedings of the 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2012
PublisherIEEE Press
Publication date2012
Pages788-793
ISBN (Print)978-1-4673-2021-4
ISBN (Electronic)978-1-4673-2022-1
DOIs
Publication statusPublished - 2012
Event3rd International Symposium on Power Electronics for Distributed Generation Systems - Aalborg Congress & Culture Center, Aalborg, Denmark
Duration: 25 Jun 201228 Jun 2012

Conference

Conference3rd International Symposium on Power Electronics for Distributed Generation Systems
LocationAalborg Congress & Culture Center
Country/TerritoryDenmark
CityAalborg
Period25/06/201228/06/2012

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