Abstract
This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self and mutual inductance from the six different layouts. PSpice simulations are used to reveal that the stray parameters inside the module play an important role under normal and abnormal operations, and thus the best performing layout strategies can be selected. The prototypes are fabricated to validate the results of the Q3D simulation analysis, in which the self-inductance is measured by using a high precision impedance analyzer.
| Original language | English |
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| Title of host publication | Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC) |
| Number of pages | 8 |
| Place of Publication | Long Beach |
| Publisher | IEEE Press |
| Publication date | Mar 2016 |
| Pages | 288 - 294 |
| ISBN (Print) | 978-1-4673-8393-6, 978-1-4673-9551-9 |
| ISBN (Electronic) | 978-1-4673-9550-2 |
| DOIs | |
| Publication status | Published - Mar 2016 |
| Event | 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, United States Duration: 20 Mar 2016 → 24 Mar 2016 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616 |
Conference
| Conference | 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) |
|---|---|
| Location | Long Beach Convention and Entertainment Center |
| Country/Territory | United States |
| City | Long Beach |
| Period | 20/03/2016 → 24/03/2016 |
| Internet address |