Abstract
A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.
Original language | English |
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Title of host publication | Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on |
Number of pages | 10 |
Publisher | IEEE Press |
Publication date | Aug 2014 |
ISBN (Print) | 9781479930166 |
ISBN (Electronic) | 9781479930142 |
DOIs | |
Publication status | Published - Aug 2014 |
Event | 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe - Lappeenranta, Finland Duration: 26 Aug 2014 → 28 Aug 2014 |
Conference
Conference | 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe |
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Country/Territory | Finland |
City | Lappeenranta |
Period | 26/08/2014 → 28/08/2014 |
Keywords
- IGBT
- MOSFET
- Reliability
- Measurement
- Semiconductor Devices