Online junction temperature measurement via internal gate resistance during turn-on

Nick Baker, Stig Munk-Nielsen, Marco Liserre, Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

47 Citations (Scopus)

Abstract

A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.
Original languageEnglish
Title of host publicationPower Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Number of pages10
PublisherIEEE Press
Publication dateAug 2014
ISBN (Print)9781479930166
ISBN (Electronic)9781479930142
DOIs
Publication statusPublished - Aug 2014
Event16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe - Lappeenranta, Finland
Duration: 26 Aug 201428 Aug 2014

Conference

Conference16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
Country/TerritoryFinland
CityLappeenranta
Period26/08/201428/08/2014

Keywords

  • IGBT
  • MOSFET
  • Reliability
  • Measurement
  • Semiconductor Devices

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