Reliability-cost models for the power switching devices of wind power converters

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Abstract

In order to satisfy the growing reliability requirements for the wind power converters with more cost-effective solution, the target of this paper is to establish a new reliability-cost model which can connect the relationship between reliability performances and corresponding semiconductor cost for power switching devices. First the conduction loss, switching loss as well as thermal impedance models of power switching devices (IGBT module) are related to the semiconductor chip number information respectively. Afterwards simplified analytical solutions, which can directly extract the junction temperature mean value Tm and fluctuation amplitude ΔTj of power devices, are presented. With the proposed reliability-cost model, it is possible to enable future reliability-oriented design of the power switching devices for wind power converters, and also an evaluation benchmark for different wind power converter configurations is opened.
Original languageEnglish
Title of host publicationProceedings of the 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) 2012
PublisherIEEE Press
Publication date2012
Pages820-827
ISBN (Print)978-1-4673-2021-4
ISBN (Electronic)978-1-4673-2022-1
DOIs
Publication statusPublished - 2012
Event3rd International Symposium on Power Electronics for Distributed Generation Systems - Aalborg Congress & Culture Center, Aalborg, Denmark
Duration: 25 Jun 201228 Jun 2012

Conference

Conference3rd International Symposium on Power Electronics for Distributed Generation Systems
LocationAalborg Congress & Culture Center
Country/TerritoryDenmark
CityAalborg
Period25/06/201228/06/2012

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