Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester

Liudmila Smirnova, Juha Pyrhönen, Francesco Iannuzzo, Rui Wu, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

11 Citations (Scopus)
1612 Downloads (Pure)

Abstract

Design of a Non-Destructive Test (NDT) set-up for short-circuit tests of 1.7 kV, 1 kA IGBT modules is discussed in this paper. The test set-up allows achieving short-circuit current up to 10 kA. The important objective during the design of the test set-up is to minimize the parasitic inductance and assure equal current sharing among the parallel connected devices. Achieving of a low inductance level is very challenging due to the current and voltage ratings, the presence of series and parallel protection systems and the required access for a thermal camera. The parasitic extractor Ansys Q3D is used to estimate the parasitic inductances during the design. A new concept of round-shaped, low inductive busbars for an NDT set-up is proposed. Simulation results verified that both reduction of overall inductance and good uniformity in current sharing among parallel devices are achieved by utilizing a circular symmetry. Experimental validation of the simulation was performed using a preliminary set-up. Further, this concept can be implemented in the design of the busbars for the power converters, where the parallel connection of the switching devices is applied to obtain higher current levels.
Original languageEnglish
Title of host publicationProceedings of the 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
Number of pages9
Place of PublicationLappeenranta, Finland
PublisherIEEE Press
Publication dateAug 2014
Pages1-9
ISBN (Print)978-9-0758-1520-7
ISBN (Electronic)978-1-4799-3014-2
DOIs
Publication statusPublished - Aug 2014
Event16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe - Lappeenranta, Finland
Duration: 26 Aug 201428 Aug 2014

Conference

Conference16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
Country/TerritoryFinland
CityLappeenranta
Period26/08/201428/08/2014

Keywords

  • Bus bar
  • Device characterization
  • Modeling
  • Power semiconductor device
  • Reliability

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