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Abstract
Design of a Non-Destructive Test (NDT) set-up for short-circuit tests of 1.7 kV, 1 kA IGBT modules is discussed in this paper. The test set-up allows achieving short-circuit current up to 10 kA. The important objective during the design of the test set-up is to minimize the parasitic inductance and assure equal current sharing among the parallel connected devices. Achieving of a low inductance level is very challenging due to the current and voltage ratings, the presence of series and parallel protection systems and the required access for a thermal camera. The parasitic extractor Ansys Q3D is used to estimate the parasitic inductances during the design. A new concept of round-shaped, low inductive busbars for an NDT set-up is proposed. Simulation results verified that both reduction of overall inductance and good uniformity in current sharing among parallel devices are achieved by utilizing a circular symmetry. Experimental validation of the simulation was performed using a preliminary set-up. Further, this concept can be implemented in the design of the busbars for the power converters, where the parallel connection of the switching devices is applied to obtain higher current levels.
Original language | English |
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Title of host publication | Proceedings of the 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe |
Number of pages | 9 |
Place of Publication | Lappeenranta, Finland |
Publisher | IEEE Press |
Publication date | Aug 2014 |
Pages | 1-9 |
ISBN (Print) | 978-9-0758-1520-7 |
ISBN (Electronic) | 978-1-4799-3014-2 |
DOIs | |
Publication status | Published - Aug 2014 |
Event | 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe - Lappeenranta, Finland Duration: 26 Aug 2014 → 28 Aug 2014 |
Conference
Conference | 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe |
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Country/Territory | Finland |
City | Lappeenranta |
Period | 26/08/2014 → 28/08/2014 |
Keywords
- Bus bar
- Device characterization
- Modeling
- Power semiconductor device
- Reliability
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Dive into the research topics of 'Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester'. Together they form a unique fingerprint.Projects
- 1 Finished
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research