Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

Emanuel-Petre Eni; Szymon Beczkowski; Stig Munk-Nielsen; Tamas Kerekes; Remus Teodorescu

doi:10.1109/APEC.2016.7467988

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

Emanuel-Petre Eni, Szymon Beczkowski, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

27 Citations (Scopus)

Abstract

The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

Original language	English
Title of host publication	Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	5
Publisher	IEEE
Publication date	Mar 2016
Pages	974 - 978
ISBN (Print)	978-1-4673-8393-6 , 978-1-4673-9551-9
ISBN (Electronic)	978-1-4673-9550-2
DOIs	https://doi.org/10.1109/APEC.2016.7467988
Publication status	Published - Mar 2016
Event	2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, United States Duration: 20 Mar 2016 → 24 Mar 2016 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Conference

Conference	2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
Location	Long Beach Convention and Entertainment Center
Country/Territory	United States
City	Long Beach
Period	20/03/2016 → 24/03/2016
Internet address	http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Keywords

4H-SiC MOSFET
Short-Circuit
Reliability
Device Characterization

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@inproceedings{92a2840b25d64a8ab3b1cc469a4803ce,

title = "Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET",

abstract = "The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.",

keywords = "4H-SiC MOSFET, Short-Circuit, Reliability, Device Characterization ",

author = "Emanuel-Petre Eni and Szymon Beczkowski and Stig Munk-Nielsen and Tamas Kerekes and Remus Teodorescu",

year = "2016",

month = mar,

doi = "10.1109/APEC.2016.7467988",

language = "English",

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pages = "974 -- 978",

booktitle = "Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 20-03-2016 Through 24-03-2016",

url = "http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616",

}

Eni, E-P, Beczkowski, S , Munk-Nielsen, S , Kerekes, T & Teodorescu, R 2016, Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET. in Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, pp. 974 - 978, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, United States, 20/03/2016. https://doi.org/10.1109/APEC.2016.7467988

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET. / Eni, Emanuel-Petre; Beczkowski, Szymon ; Munk-Nielsen, Stig et al.
Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. p. 974 - 978.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

AU - Eni, Emanuel-Petre

AU - Beczkowski, Szymon

AU - Munk-Nielsen, Stig

AU - Kerekes, Tamas

AU - Teodorescu, Remus

PY - 2016/3

Y1 - 2016/3

N2 - The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

AB - The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results. The study aims to present insights specific to the device which are different from that of silicon (Si) based devices. During the short-circuit operation, MOSFET saturation current, ID,sat, increases for a few microseconds before decreasing gently. Degradation of the device can be observed at pulses longer than 5.9??s. The SiC MOSFET failed after-turn off, after a pulse of 8.6??s, due to an increase in the leakage current.

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KW - Device Characterization

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M3 - Article in proceeding

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BT - Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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ER -

Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET

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