SiC MOSFETs based split output half bridge inverter: Current commutation mechanism and efficiency analysis

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15 Citations (Scopus)

Abstract

Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration. This paper makes the current commutation mechanism and efficiency analysis of half bridge with split output based on SiC MOSFETs. Current commutation process analysis is illustrated together with LTspice simulation and afterwards, verified by the experimental results of a double pulse test circuit with split output. The double pulse test shows the devices' current during commutation process and the reduced switching losses of SiC MOSFETs compared to that of the traditional half bridge. The efficiency comparison is presented with experimental results of half bridge power inverter with split output and traditional half bridge inverter, from switching frequency 10 kHz to 100 kHz. The experimental results comparison shows that the half bridge with split output has an efficiency improvement of more than 0.5% at 100 kHz switching frequency.
Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages8
PublisherIEEE Press
Publication dateSept 2014
Pages1581-1588
ISBN (Print)9781479957774
ISBN (Electronic)9781479956982
DOIs
Publication statusPublished - Sept 2014
Event2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, Pittsburgh, United States
Duration: 14 Sept 201418 Sept 2014

Conference

Conference2014 IEEE Energy Conversion Congress and Exposition (ECCE)
LocationPittsburgh
Country/TerritoryUnited States
CityPittsburgh
Period14/09/201418/09/2014

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